1.The half-chip configuration is another highlight of the module, which results in less shading effect and lower risk of hot spots. This means that in sunny environments, the modules can capture solar energy more efficiently, thereby increasing power generation. At the same time, the half-chip configuration also reduces the risk of hot spots, making the module safer and more reliable during use.
2.Maximum Power up to 610W+
Module max output power up to 610W+
3.High Reliability
Ultra-low LID batteries have higher output power and component efficiency. Due to its high fill factor, it can absorb sunlight more effectively, thus improving the photoelectric conversion efficiency of the battery. This means that under the same lighting conditions, ultra-low LID batteries can generate more electricity and increase power generation.
4.Ultra-low LID
0.55% Annual Degradation Over 25 years.Likewise, the application of PID-resistant batteries and packaging materials can also reduce the risk of battery degradation during use. These materials can effectively resist the effects of potential-induced degradation (PID), thereby extending the life of the battery.
Likewise, the application of PID-resistant batteries and packaging materials can also reduce the risk of battery degradation during use. These materials can effectively resist the effects of potential-induced degradation (PID), thereby extending the life of the battery.
Product number | JAM78S30-585/GR | JAM78S30-590/GR | JAM78S30-595/GR | JAM78S30-600/GR | JAM78S30-605/GR | JAM78S30-610/GR |
quality assurance | ||||||
product quality assurance | 12 years | |||||
Power Output Guaranteed | 0.45% Annual Degradation Over30years | |||||
Electrical performance parameters (STC) | ||||||
Peak Power (Pmax) | 585 Wp | 590 Wp | 595 Wp | 600 Wp | 605 Wp | 610 Wp |
Peak operating voltage (Vmpp) | 44.56 V | 44.8 V | 45.05 V | 45.3 V | 45.53 V | 45.77 V |
Peak operating current (Impp) | 13.13 A | 13.17 A | 13.21 A | 13.25 A | 13.29 A | 13.33 A |
Open circuit voltage (Voc) | 53.2 V | 53.3 V | 53.4 V | 53.5 V | 53.61 V | 53.73 V |
Short circuit current (Isc) | 13.88 A | 13.93 A | 13.98 A | 14.03 A | 14.08 A | 14.13 A |
Component efficiency | 20.90% | 21.10% | 21.30% | 21.50% | 21.60% | 21.80% |
Power deviation (positive) | 1% | 1% | 1% | 1% | 1% | 1% |
Electrical performance parameters (NOCT) | ||||||
Peak Power (Pmax) | 442 Wp | 446 Wp | 450 Wp | 454 Wp | 458 Wp | 462 Wp |
Peak operating voltage (Vmpp) | 42.69 V | 42.82 V | 42.94 V | 43.07 V | 43.21 V | 43.34 V |
Peak operating current (Impp) | 10.36 A | 10.42 A | 10.48 A | 10.54 A | 10.6 A | 10.66 A |
Open circuit voltage (Voc) | 50.59 V | 50.72 V | 50.86 V | 51.01 V | 51.17 V | 51.33 V |
Short circuit current (Isc) | 11.07 A | 11.13 A | 11.19 A | 11.25 A | 11.3 A | 11.35 A |
maximum durable temperature | 45±2 °C | |||||
temperature characteristics | ||||||
Operating temperature | -40~85 °C | |||||
Temperature coefficient (Pmax) | -0.35 %/°C | |||||
Temperature Coefficient (Voc) | -0.275 %/°C | |||||
Temperature Coefficient (Isc) | 0.045 %/°C | |||||
System Integration Parameters | ||||||
system voltage | 1500 V | |||||
Fuse rated current | 25 A | |||||
physical parameters | ||||||
Component size (height/width/thickness) | 2465x1134x35 mm | |||||
weight | 30.5 kg | |||||
Cell type | back passivation | |||||
Cell Quantity | 156 | |||||
Number of Bypass Diodes | 3 | |||||
Junction box protection class | IP 68 | |||||
connector type | MC4 | |||||
Cable cross section | 4 mm2 | |||||
cable length | 1500 mm |