Product
LONGI HI-MO 5 LR5-72HBD 535~555M
Specification
Our products are built on M10 silicon wafers, which are the best choice for very large power stations. We use advanced component technologies including M10 gallium-doped silicon wafers, integrated segmented strips and 9-busbar half-cell cells. These advanced technologies enable us to deliver superior component efficiency. In addition, our bifacial power generation capabilities have been globally proven, ensuring long-term reliability. The quality of our components is also a major feature of our products, ensuring long-term and stable power generation revenue. We are committed to providing customers with efficient and reliable power generation solutions and providing end customers with stable power generation income.
High reliability: Our products adopt intelligent crack-free welding technology, which can improve the power and efficiency of components, and also improve the load-bearing capacity of components. The operating current of the module is about 13A, which is perfectly suitable for mainstream string inverters. Our gallium-doped technology overcomes the problem of light attenuation of components and ensures long life of components and stability of power generation. Power generation on the back of superimposed modules has higher comprehensive power generation capacity, which has been verified by customers and third parties.
Ultra-low LID: Our products attenuate 2% in the first year and 0.4% per year from the second year to the 30th year. Such a design provides end customers with long-term stable power generation income. Our anti-PID batteries and packaging materials can effectively reduce attenuation to ensure the power generation performance of the product.
Parameter List
| Product number | LR5-72HBD-535M | LR5-72HBD-540M | LR5-72HBD-545M | LR5-72HBD-550M | LR5-72HBD-555M |
| quality assurance | 12-year Warranty forMaterials and Processing | ||||
| product quality assurance | 30-year Warranty for ExtraLinear Power Output | ||||
| Power Output Guaranteed | 2% degradation in the first year, 0.4% annual degradation in the 2nd-30th | ||||
| Electrical performance parameters (STC) | |||||
| Peak Power (Pmax) | 535 Wp | 540 Wp | 545 Wp | 550 Wp | 555 Wp |
| Peak operating voltage (Vmpp) | 41.5 V | 41.65 V | 41.8 V | 41.95 V | 42.1 V |
| Peak operating current (Impp) | 12.9 A | 12.97 A | 13.04 A | 13.12 A | 13.19 A |
| Open circuit voltage (Voc) | 49.35 V | 49.5 V | 49.65 V | 49.8 V | 49.95 V |
| Short circuit current (Isc) | 13.78 A | 13.85 A | 13.92 A | 13.99 A | 14.05 A |
| Component efficiency | 20.70% | 20.90% | 21.10% | 21.30% | 21.50% |
| Power deviation (positive) | 3% | 3% | 3% | 3% | 3% |
| Electrical performance parameters (NOCT) | |||||
| Peak Power (Pmax) | 399.9 Wp | 403.6 Wp | 407.4 Wp | 411.1 Wp | 414.8 Wp |
| Peak operating voltage (Vmpp) | 38.7 V | 38.86 V | 39 V | 39.14 V | 39.28 V |
| Peak operating current (Impp) | 10.33 A | 10.39 A | 10.45 A | 10.51 A | 10.56 A |
| Open circuit voltage (Voc) | 46.4 V | 46.54 V | 46.68 V | 46.82 V | 46.97 V |
| Short circuit current (Isc) | 11.12 A | 11.17 A | 11.23 A | 11.29 A | 11.34 A |
| maximum durable temperature | 45±2 °C | ||||
| temperature characteristics | |||||
| Operating temperature | -40~85 °C | ||||
| Temperature coefficient (Pmax) | -0.34 %/°C | ||||
| Temperature Coefficient (Voc) | -0.265 %/°C | ||||
| Temperature Coefficient (Isc) | 0.05 %/°C | ||||
| System Integration Parameters | |||||
| system voltage | 1500 V | ||||
| Fuse rated current | 30 A | ||||
| physical parameters | |||||
| Component size (height/width/thickness) | 2278x1134x35 mm | ||||
| weight | 32.6 kg | ||||
| Cell type | double sided | ||||
| Cell specification | 182x182 mm | ||||
| Cell Quantity | 144 | ||||
| glass type | Tempering | ||||
| glass thickness | 2 mm | ||||
| border type | Anodized aluminum alloy | ||||
| Number of Bypass Diodes | 3 | ||||
| Junction box protection class | IP 68 | ||||
| Cable cross section | 4 mm² | ||||
| cable length | 1400 mm | ||||
