1. Suitable for Distributed Projects with Advanced Module Technology
Our solar panel is perfectly suited for distributed projects, thanks to its advanced module technology that delivers superior module efficiency. Featuring M10 Gallium-doped Wafer, Integrated Segmented Ribbons, and a 9-busbar Half-cut Cell design, it ensures outstanding outdoor power generation performance. When it comes to long-term reliability, our high module quality sets the standard, guaranteeing consistent power generation for years to come.
2. Maximum Power up to 425W+
Harness the full potential of solar energy with our components that offer impressive power capabilities, reaching a maximum power output of 425W+. This means you can count on stable and efficient power generation income across various environments, meeting the diverse needs of our valued customers. Our commitment to technological innovation and optimized design ensures that you receive a reliable, efficient, and durable power generation solution.
3. High Reliability for Uninterrupted Energy Production
Our solar panel stands out with smart crack-free welding technology, enhancing component power and efficiency while improving load resistance. With a working current of approximately 13A, it seamlessly integrates with mainstream string inverters. Gallium-doped technology mitigates light attenuation, ensuring long-term power generation stability. Additionally, the power generation on the back of the superimposed modules boosts comprehensive power generation capacity, a gain verified by customers and third-party testing.
4. Ultra-low LID for Long-term Stability
We understand the importance of consistent power generation revenue for our customers. That's why our solar panel exhibits only a 2% degradation in the first year and a minimal 0.4% annual degradation from the 2nd to the 30th year. This ultra-low Light-Induced Degradation (LID) is achieved through anti-PID cell technology and advanced encapsulation materials, providing the assurance of long-term and stable power generation.
Product number | LR5-54HPH-405M | LR5-54HPH-410M | LR5-54HPH-415M | LR5-54HPH-420M | LR5-54HPH-425M |
quality assurance | 12-year Warranty forMaterials and Processing | ||||
product quality assurance | 30-year Warranty for ExtraLinear Power Output | ||||
Power Output Guaranteed | 2% degradation in the first year, 0.4% annual degradation in the 2nd-30th | ||||
Electrical performance parameters (STC) | |||||
Peak Power (Pmax) | 405 Wp | 410 Wp | 415 Wp | 420 Wp | 425 Wp |
Peak operating voltage (Vmpp) | 31 V | 31.25 V | 31.49 V | 31.73 V | 31.94 V |
Peak operating current (Impp) | 13.07 A | 13.12 A | 13.18 A | 13.24 A | 13.31 A |
Open circuit voltage (Voc) | 37 V | 37.25 V | 37.5 V | 37.75 V | 37.96 V |
Short circuit current (Isc) | 13.83 A | 13.88 A | 13.94 A | 14.01 A | 14.08 A |
Component efficiency | 20.70% | 21% | 21.30% | 21.50% | 21.80% |
Power deviation (positive) | 3% | 3% | 3% | 3% | 3% |
Electrical performance parameters (NOCT) | |||||
Peak Power (Pmax) | 302.7 Wp | 306.85 Wp | 310.2 Wp | 313.9 Wp | 317.7 Wp |
Peak operating voltage (Vmpp) | 28.8 V | 29.03 V | 29.25 V | 29.47 V | 29.67 V |
Peak operating current (Impp) | 10.52 A | 10.56 A | 10.6 A | 10.65 A | 10.71 A |
Open circuit voltage (Voc) | 34.79 V | 35.02 V | 35.26 V | 35.49 V | 35.69 V |
Short circuit current (Isc) | 11.18 A | 11.22 A | 11.27 A | 11.32 A | 11.38 A |
maximum durable temperature | 45±2 °C | ||||
temperature characteristics | |||||
Operating temperature | -40~85 °C | ||||
Temperature coefficient (Pmax) | -0.34 %/°C | ||||
Temperature Coefficient (Voc) | -0.265 %/°C | ||||
Temperature Coefficient (Isc) | 0.05 %/°C | ||||
System Integration Parameters | |||||
system voltage | 1500 V | ||||
Fuse rated current | 25 A | ||||
physical parameters | |||||
Component size (height/width/thickness) | 1722x1134x30 mm | ||||
weight | 20.8 kg | ||||
Cell type | Monocrystalline silicon | ||||
Cell specification | 182x182 mm | ||||
Cell Quantity | 108 | ||||
glass type | Tempering | ||||
glass thickness | 3.2 mm | ||||
border type | Anodized aluminum alloy | ||||
Number of Bypass Diodes | 3 | ||||
Junction box protection class | IP 68 | ||||
Cable cross section | 4 mm² |