Product
LONGI HI-MO 5m LR5-72HPH 540~560M
Specification
1.Suitable for distributed projects，Advanced module technology delivers superiormodule efficiency，（M10 Gallium-doped Wafer ·Integrated Segmented Ribbons ·9-busbar Half-cut Cell），Excellent outdoor power generation performance，High module quality ensures long-term reliability
2.High Reliability
S"We use intelligent crack-free welding technology to improve module power and efficiency, while enhancing the module's load-bearing capacity. The module operating current is about 13A, which is perfectly suitable for mainstream string inverters. In addition, gallium-doped technology overcomes the problem of module light attenuation , ensuring the stability of long-life component power generation. The power generation on the back of the stacked module has a higher comprehensive power generation capacity, and the power generation gain has been verified by customers and third parties. We are committed to providing efficient and reliable products to provide end customers with long-term stable power generation income. "
3.Ultra-low LID
2% degradation in the first year, 0.4% annual degradation in the 2nd-30th year.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.
Parameter List
| Product number | LR5-72HPH-540M | LR5-72HPH-545M | LR5-72HPH-550M | LR5-72HPH-555M | LR5-72HPH-560M |
| quality assurance | 12-year Warranty forMaterials and Processing | ||||
| product quality assurance | 30-year Warranty for ExtraLinear Power Output | ||||
| Power Output Guaranteed | 2% degradation in the first year, 0.4% annual degradation in the 2nd-30th | ||||
| Electrical performance parameters (STC) | |||||
| Peak Power (Pmax) | 540 Wp | 545 Wp | 550 Wp | 555 Wp | 560 Wp |
| Peak operating voltage (Vmpp) | 41.65 V | 41.8 V | 41.95 V | 42.1 V | 42.25 V |
| Peak operating current (Impp) | 12.79 A | 13.04 A | 13.12 A | 13.19 A | 13.26 A |
| Open circuit voltage (Voc) | 49.5 V | 49.65 V | 49.8 V | 49.95 V | 50.1 V |
| Short circuit current (Isc) | 13.85 A | 13.92 A | 13.98 A | 14.04 A | 14.1 A |
| Component efficiency | 20.90% | 21.10% | 21.30% | 21.50% | 21.70% |
| Power deviation (positive) | 3% | 3% | 3% | 3% | 3% |
| Electrical performance parameters (NOCT) | |||||
| Peak Power (Pmax) | 403.6 Wp | 407.4 Wp | 411.1 Wp | 414.8 Wp | 418.6 Wp |
| Peak operating voltage (Vmpp) | 38.69 V | 38.83 V | 38.97 V | 39.11 V | 39.25 V |
| Peak operating current (Impp) | 10.43 A | 10.49 A | 10.56 A | 10.61 A | 10.67 A |
| Open circuit voltage (Voc) | 46.54 V | 46.68 V | 46.82 V | 46.97 V | 47.11 V |
| Short circuit current (Isc) | 11.2 A | 11.25 A | 11.31 A | 11.35 A | 11.4 A |
| maximum durable temperature | 45±2 °C | ||||
| temperature characteristics | |||||
| Operating temperature | -40~85 °C | ||||
| Temperature coefficient (Pmax) | -0.34 %/°C | ||||
| Temperature Coefficient (Voc) | -0.265 %/°C | ||||
| Temperature Coefficient (Isc) | 0.05 %/°C | ||||
| System Integration Parameters | |||||
| system voltage | 1500 V | ||||
| Fuse rated current | 25 A | ||||
| physical parameters | |||||
| Component size (height/width/thickness) | 2278x1134x35 mm | ||||
| weight | 27.5 kg | ||||
| Cell type | Monocrystalline silicon | ||||
| Cell specification | 182x182 mm | ||||
| Cell Quantity | 144 | ||||
| glass type | Tempering | ||||
| glass thickness | 3.2 mm | ||||
| border type | Anodized aluminum alloy | ||||
| Number of Bypass Diodes | 3 | ||||
| Junction box protection class | IP 68 | ||||
| Cable cross section | 4 mm² | ||||
