Product
Trina Vertex N TSM-DE21 650 -670W
Specification
1.210+N product technology, n-type i-TOPCon technology，With n-type silicon wafers as the substrate, the minority carrier lifetime is higher than that of p-type silicon wafers, n-type silicon wafers are used as the substrate, there is no boron-oxygen compound pair, combined with advanced cell preparation technology, the light-induced attenuation is significantly lower than that of p-type cells, PACO The back side adopts passivation contact structure, and its carrier transport is based on quantum tunneling effect, and the temperature performance of the battery is better.
2.Maximum Power up to 670W+
Module max output power up to 670W+
3.High Reliability
Excellent resistance to hidden cracks and anti-PID performance, power warranty period of up to 30 years, more excellent double-sided power generation performance, double-sided rate of 80 ± 5%, single-watt power generation increased by 3% compared with PERC, and lower LCOE , fully meet the different needs of distributed and large-scale ground power station customers, flexibly adapt to the tracking bracket, greatly improve the utilization rate of the tracking bracket and effectively reduce B0S cost
4.Choosing TALLMAX modules is a reliable and wise investment.
Trina Solar's TALLMAX modules enable commercial and utility-scale solar projects to achieve significant system savings. As a vertically integrated company, Trina Solar controls the quality of PV systems throughout the supply chain, reducing risk and increasing return on investment. Trina Solar is the first PV company to receive certification from UL’s Customer Test Data Program, allowing us to test and publish UL recognized quality standards.
Parameter List
| Product number | 650 | 655 | 660 | 665 | 670 |
| quality assurance | 12 year Product Workmanship Warranty | ||||
| product quality assurance | 30 year Power Warranty | ||||
| Power Output Guaranteed | 1% rst year degradation,0.40% Annual Power Attenuation | ||||
| Electrical performance parameters (STC) | |||||
| Peak Power (Pmax) | 650 Wp | 655 Wp | 660 Wp | 665 Wp | 670 Wp |
| Peak operating voltage (Vmpp) | 37.4 V | 37.6 V | 37.8 V | 38 V | 38.2 V |
| Peak operating current (Impp) | 17.39 A | 17.43 A | 17.47 A | 17.51 A | 17.55 A |
| Open circuit voltage (Voc) | 45.3 V | 45.5 V | 45.7 V | 45.9 V | 46.1 V |
| Short circuit current (Isc) | 18.44 A | 18.48 A | 18.53 A | 18.57 A | 18.62 A |
| Component efficiency | 20.90% | 21.10% | 21.20% | 21.40% | 21.60% |
| Power deviation (positive) | 0.50% | 0.50% | 0.50% | 0.50% | 0.50% |
| Electrical performance parameters (NOCT) | |||||
| Peak Power (Pmax) | 492 Wp | 496 Wp | 500 Wp | 504 Wp | 508 Wp |
| Peak operating voltage (Vmpp) | 34.9 V | 35.1 V | 35.3 V | 35.4 V | 35.6 V |
| Peak operating current (Impp) | 14.09 A | 14.13 A | 14.17 A | 14.22 A | 14.26 A |
| Open circuit voltage (Voc) | 42.7 V | 42.9 V | 43 V | 43.2 V | 43.4 V |
| Short circuit current (Isc) | 14.86 A | 14.89 A | 14.93 A | 14.96 A | 15.01 A |
| maximum durable temperature | 43±2 °C | ||||
| temperature characteristics | |||||
| Operating temperature | -40~85 °C | ||||
| Temperature coefficient (Pmax) | -0.34 %/°C | ||||
| Temperature Coefficient (Voc) | -0.25 %/°C | ||||
| Temperature Coefficient (Isc) | 0.04 %/°C | ||||
| System Integration Parameters | |||||
| system voltage | 1500 V | ||||
| Fuse rated current | 30 A | ||||
| physical parameters | |||||
| Component size (height/width/thickness) | 2384x1303x33 mm | ||||
| weight | 33.3 kg | ||||
| Cell type | Monocrystalline silicon | ||||
| Cell Quantity | 132 | ||||
| glass type | Anti-reflective coating | ||||
| glass thickness | 3.2 mm | ||||
| Type of sealing material | EVA | ||||
| border type | Anodized aluminum alloy | ||||
| Junction box protection class | IP 68 | ||||
| connector type | MC4 | ||||
| Cable cross section | 4 mm² | ||||
