1.PANDA 3.0 modules use the industry's cutting-edge n-type monocrystalline TOPCon cell technology. With high quality,encapsulation materials and classic glass-backsheet structure, PANDA 3.0 modules are perfectly suited to the harsh environment and provide you with high reliability and quality assurance.
2.Excellent power yield
The large-size battery design effectively enhances the output power of the module. At the same time, it combines excellent temperature coefficient, excellent low-light performance and outstanding anti-LID/LeTID attenuation technology. The module can sustainably generate more power once used.
3.High Reliability
The large size cell enhances the module’s power output, with the excel-lent temperature coefficient, superior low light performance and com-prehensive LID/LeTID degradation suppression technology, allows the module to generate more energy yield once in use.The modules meet IEC standard testing requirements and are resistant to salt mist, ammonia, dust and sand, snail trail and PID risks.The glass-backsheet structure, special material selection and extra-strong frames effectively enhance the mechanical performance of the modules, their compatibility with mainstream trackers and inverters, and their adaptability to harsh environments.The multi-busbar design effectively reduces the impact of micro-cracks and broken busbars, and the half-cell structure effectively reduces the
impact of shadow shading.
4.Ultra-low LID
Attenuation in the first year: 1%, annual attenuation: 0.4%.Ultra-low LID batteries also use anti-PID (Potential Induced Degradation) batteries and packaging materials to reduce battery attenuation. Anti-PID battery and packaging materials can effectively resist potential-induced degradation (PID) that the battery may suffer during use, thereby further extending the service life of the battery.
Product number | 405 | 410 | 415 | 420 | 425 | 430 |
quality assurance | ||||||
product quality assurance | 12 years | |||||
Power Output Guaranteed | Degrades 0.55% per year for 25 years | |||||
Electrical performance parameters (STC) | ||||||
Peak Power (Pmax) | 405 Wp | 410 Wp | 415 Wp | 420 Wp | 425 Wp | 430 Wp |
Peak operating voltage (Vmpp) | 30.93 V | 31.12 V | 31.31 V | 31.50 V | 31.69 V | 31.88 V |
Peak operating current (Impp) | 13.10 A | 13.18 A | 13.26 A | 13.34 A | 13.42 A | 13.49 A |
Open circuit voltage (Voc) | 37.53 V | 37.72 V | 37.91 V | 38.10 V | 38.29 V | 38.48 V |
Short circuit current (Isc) | 13.84 A | 13.92 A | 14.00 A | 14.08 A | 14.16 A | 14.24 A |
Component efficiency | 20.74% | 21.00% | 21.25% | 21.51% | 21.76% | 22.02% |
Power deviation (positive) | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% |
Electrical performance parameters (NOCT) | ||||||
Peak Power (Pmax) | 307.61 Wp | 311.30 Wp | 315.20 Wp | 319.02 Wp | 322.87 Wp | 326.50 Wp |
Peak operating voltage (Vmpp) | 29.45 V | 29.63 V | 29.81 V | 30.00 V | 30.18 V | 30.36 V |
Peak operating current (Impp) | 10.44 A | 10.51 A | 10.57 A | 10.64 A | 10.70 A | 10.76 A |
Open circuit voltage (Voc) | 35.58 V | 35.76 V | 35.94 V | 36.12 V | 36.30 V | 36.48 V |
Short circuit current (Isc) | 11.16 A | 11.22 A | 11.29 A | 11.35 A | 11.42 A | 11.48 A |
maximum durable temperature | 42±2 °C | |||||
temperature characteristics | ||||||
Operating temperature | -40~85 °C | |||||
Temperature coefficient (Pmax) | #NAME? | |||||
Temperature Coefficient (Voc) | #NAME? | |||||
Temperature Coefficient (Isc) | 0.046 %/°C | |||||
System Integration Parameters | ||||||
system voltage | 1000 V | |||||
Fuse rated current | 25 A | |||||
physical parameters | ||||||
Component size (height/width/thickness) | 1722x1134x30 mm | |||||
weight | 21.5 kg | |||||
Cell type | Monocrystalline silicon | |||||
Cell specification | 156.75×156.75 mm | |||||
Cell Quantity | 108 | |||||
glass type | Tempering | |||||
glass thickness | 3.2 mm | |||||
border type | Anodized aluminum alloy | |||||
Junction box protection class | IP 68 | |||||
connector type | MC4 | |||||
Cable cross section | 4 mm2 | |||||
cable length | 1200 mm |