YINGLI PANDA 3.0 PRO 550-575W YL575CF-72 e/2

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YINGLI PANDA 3.0 PRO 550-575W

YL575CF-72 e/2


Product Detail

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Specification

1.PANDA 3.0 modules use the industry's cutting-edge n-type monocrystalline TOPCon cell technology. With high quality,encapsulation materials and classic glass-backsheet structure, PANDA 3.0 modules are perfectly suited to the harsh environment and provide you with high reliability and quality assurance.
2.Wide-angle invisible soldering ribbon creates high-performance and high-looking components

Multi-busbar circular/triangular ribbons increase the optical utilization rate of the ribbon area from 5% to more than 40%; the "wide-angle ribbon stealth technology" based on total reflection can reduce light pollution within a certain angle range.

3.High Reliability
This module also has excellent low-light performance and can maintain stable power generation output even under relatively poor lighting conditions. This is due to the application of comprehensive LID (Light Induced Degradation)/LeTID (Potential Induced Degradation) attenuation suppression technology, which effectively reduces the energy loss of components in low-light environments and further increases power generation.
4.Ultra-low LID
Attenuation in the first year: 1%, annual attenuation: 0.4%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.

Parameter List

Product number 550 555 560 565 570 575
quality assurance
product quality assurance 12 years
Power Output Guaranteed Degrades 0.55% per year for 25 years
Electrical performance parameters (STC)
Peak Power (Pmax) 550 Wp 555 Wp 560 Wp 565 Wp 570 Wp 575 Wp
Peak operating voltage (Vmpp) 41.57 V 41.76 V 41.94 V 42.13 V 42.29 V 42.47 V
Peak operating current (Impp) 13.24 A 13.30 A 13.36 A 13.42 A 13.48 A 13.54 A
Open circuit voltage (Voc) 50.26 V 50.46 V 50.66 V 50.86 V 51.06 V 51.26 V
Short circuit current (Isc) 13.89 A 14.07 A 14.14 A 14.20 A 14.26 A 14.32 A
Component efficiency 21.29% 21.48% 21.68% 21.87% 22.07% 22.26%
Power deviation (positive) 1.50% 1.50% 1.50% 1.50% 1.50% 1.50%
Electrical performance parameters (NOCT)
Peak Power (Pmax) 417.85 Wp 421.67 Wp 425.39 Wp 429.24 Wp 432.80 Wp 436.57 Wp
Peak operating voltage (Vmpp) 39.58 V 39.77 V 39.94 V 40.12 V 40.27 V 40.44 V
Peak operating current (Impp) 10.56 A 10.60 A 10.65 A 10.70 A 10.75 A 10.80 A
Open circuit voltage (Voc) 47.64 V 47.83 V 48.02 V 48.21 V 48.40 V 48.59 V
Short circuit current (Isc) 11.28 A 11.34 A 11.40 A 11.45 A 11.50 A 11.55 A
maximum durable temperature 42±2 °C
temperature characteristics
Operating temperature -40~85 °C
Temperature coefficient (Pmax) #NAME?
Temperature Coefficient (Voc) #NAME?
Temperature Coefficient (Isc) 0.046 %/°C
System Integration Parameters
system voltage 1000 VDC / 1500 VDC
Fuse rated current 30 A
physical parameters
Component size (height/width/thickness) 2278x1134x30 mm
weight 32.0 kg
Cell type Monocrystalline silicon
Cell specification 144×144 mm
Cell Quantity 144
glass type Tempering
glass thickness 3.2 mm
border type Anodized aluminum alloy
Junction box protection class IP 68
connector type MC4
Cable cross section 4 mm2
cable length 1200 mm

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