Product
YINGLI YLM-J 3.0 PLUS 645-670W YL670D-45f 1/2
Specification
1.YLM 3.0 modules use high efficiency p-type monocrystalline PERC cell technology. With high quality encapsulation materials and classic glass-backsheet structure, YLM 3.0 modules are perfectly suited to the harsh environment and provide you with high reliability and quality assurance.
2.Maximum Power up to 670W+
Module max output power up to 670W+
3.High Reliability
The large size cell enhances the module’s power output, while the ex-cellent temperature coefficient and comprehensive LID/LeTID degrada-tion suppression technology allow the module to generate more energy yield once in use.The modules meet IEC standard testing requirements and are resistant to salt mist, ammonia, dust and sand, snail trail and PID risks.The glass-backsheet structure, special material selection and ex-tra-strong frames effectively enhance the mechanical performance of the modules, their compatibility with mainstream trackers and invert-ers, and their adaptability to harsh environments.The multi-busbar design effectively reduces the impact of micro-cracks and broken busbars, and the half-cell structure effectively reduces the impact of shadow shading.
4.Ultra-low LID
Attenuation in the first year: 1%, annual attenuation: 0.55%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.
Parameter List
| Product number | 645 | 650 | 655 | 660 | 665 | 670 |
| quality assurance | ||||||
| product quality assurance | 12 years | |||||
| Power Output Guaranteed | Degrades 0.55% per year for 25 years | |||||
| Electrical performance parameters (STC) | ||||||
| Peak Power (Pmax) | 645 Wp | 650 Wp | 655 Wp | 660 Wp | 665 Wp | 670 Wp |
| Peak operating voltage (Vmpp) | 37.50 V | 37.70 V | 37.90 V | 38.10 V | 38.30 V | 38.50 V |
| Peak operating current (Impp) | 17.20 A | 17.24 A | 17.29 A | 17.33 A | 17.37 A | 17.41 A |
| Open circuit voltage (Voc) | 45.10 V | 45.30 V | 45.50 V | 45.70 V | 45.90 V | 46.10V |
| Short circuit current (Isc) | 18.26 A | 18.31 A | 18.36 A | 18.42 A | 18.48 A | 18.54 A |
| Component efficiency | 20.76% | 20.92% | 21.09% | 21.25% | 21.41% | 21.57% |
| Power deviation (positive) | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% |
| Electrical performance parameters (NOCT) | ||||||
| Peak Power (Pmax) | 484.42 Wp | 488.18 Wp | 491.93 Wp | 495.69 Wp | 499.44 Wp | 503.20 Wp |
| Peak operating voltage (Vmpp) | 35.21 V | 35.40 V | 35.56 V | 35.75 V | 35.94 V | 36.13 V |
| Peak operating current (Impp) | 13.76 A | 13.79 A | 13.83 A | 13.86 A | 13.90 A | 13.93 A |
| Open circuit voltage (Voc) | 42.64 V | 42.83 V | 43.02 V | 43.21 V | 43.40 V | 43.59 V |
| Short circuit current (Isc) | 14.71 A | 14.75 A | 14.79 A | 14.84 A | 14.89 A | 14.94 A |
| maximum durable temperature | 43±2 °C | |||||
| temperature characteristics | ||||||
| Operating temperature | -40~85 °C | |||||
| Temperature coefficient (Pmax) | .-0.34 %/°C | |||||
| Temperature Coefficient (Voc) | .-0.25 %/°C | |||||
| Temperature Coefficient (Isc) | 0.04 %/°C | |||||
| System Integration Parameters | ||||||
| system voltage | 1000 VDC / 1500 VDC | |||||
| Fuse rated current | 30 A | |||||
| physical parameters | ||||||
| Component size (height/width/thickness) | 2384x1303x35 mm | |||||
| weight | 34 kg | |||||
| Cell type | Monocrystalline silicon | |||||
| Cell specification | 132×132 mm | |||||
| Cell Quantity | 132 | |||||
| glass type | Tempering | |||||
| glass thickness | 3.2 mm | |||||
| border type | Anodized aluminum alloy | |||||
| Junction box protection class | IP 68 | |||||
| connector type | MC4 | |||||
| Cable cross section | 4 mm2 | |||||
| cable length | 1200 mm | |||||
