YINGLI YLM-J 3.0 PLUS 645-670W YL670DF66 f/2

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YINGLI YLM-J 3.0 PLUS 645-670W

YL670DF66 f/2


Product Detail

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Specification

1.The Panda 3.0 module uses high-quality packaging materials and a classic glass backplane structure, which makes it perfectly adaptable to various harsh environmental conditions. Whether it is high temperature, low temperature, high humidity or high altitude, the Panda 3.0 module can operate stably and maintain excellent performance.
2.Maximum Power up to 575W+
For many application scenarios, this power output is sufficient to meet the needs. For example, in industrial equipment that requires large amounts of power, this module can ensure the normal operation and efficient operation of the equipment. At the same time, for some high-demand gaming computers or professional workstations, this kind of power can also meet their high-performance needs.
3.High Reliability
This component also uses comprehensive LID/LeTID attenuation suppression technology. This technology can continue to improve power generation efficiency after use, allowing components to produce more electricity over long periods of use.
4.Ultra-low LID
Attenuation in the first year: 1%, annual attenuation: 0.4%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.

Parameter List

Product number 645 650 655 660 665 670
quality assurance
product quality assurance 12 years
Power Output Guaranteed Degrades 0.55% per year for 25 years
Electrical performance parameters (STC)
Peak Power (Pmax) 645 Wp 650 Wp 655 Wp 660 Wp 665 Wp 670 Wp
Peak operating voltage (Vmpp) 37.50 V 37.70 V 37.90 V 38.10 V 38.30 V 38.50 V
Peak operating current (Impp) 17.20 A 17.24 A 17.29 A 17.33 A 17.37 A 17.41 A
Open circuit voltage (Voc) 45.10 V 45.30 V 45.50 V 45.70 V 45.90 V 46.10V
Short circuit current (Isc) 18.26 A 18.31 A 18.36 A 18.42 A 18.48 A 18.54 A
Component efficiency 20.76% 20.92% 21.09% 21.25% 21.41% 21.57%
Power deviation (positive) 1.50% 1.50% 1.50% 1.50% 1.50% 1.50%
Electrical performance parameters (NOCT)
Peak Power (Pmax) 484.42 Wp 488.18 Wp 491.93 Wp 495.69 Wp 499.44 Wp 503.20 Wp
Peak operating voltage (Vmpp) 35.21 V 35.40 V 35.56 V 35.75 V 35.94 V 36.13 V
Peak operating current (Impp) 13.76 A 13.79 A 13.83 A 13.86 A 13.90 A 13.93 A
Open circuit voltage (Voc) 42.64 V 42.83 V 43.02 V 43.21 V 43.40 V 43.59 V
Short circuit current (Isc) 14.71 A 14.75 A 14.79 A 14.84 A 14.89 A 14.94 A
maximum durable temperature 43±2 °C
temperature characteristics
Operating temperature -40~85 °C
Temperature coefficient (Pmax) .-0.34 %/°C
Temperature Coefficient (Voc) .-0.25 %/°C
Temperature Coefficient (Isc) 0.04 %/°C
System Integration Parameters
system voltage 1000 VDC / 1500 VDC
Fuse rated current 30 A
physical parameters
Component size (height/width/thickness) 2384x1303x35 mm
weight 34 kg
Cell type Monocrystalline silicon
Cell specification 132×132 mm
Cell Quantity 132
glass type Tempering
glass thickness 3.2 mm
border type Anodized aluminum alloy
Junction box protection class IP 68
connector type MC4
Cable cross section 4 mm2
cable length 1200 mm

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