1.The module also uses a classic glass back panel structure. The glass backplane has high light transmittance and impact resistance, and can effectively protect the circuit inside the component from the external environment. At the same time, the heat dissipation performance of the glass backplane is also better, which helps to improve the working efficiency and service life of the components.
2.Maximum Power up to 415W+
The maximum power is the maximum power that the module can continuously output under specific conditions (such as 100% load), while the maximum output power is the maximum power that the module can continuously output under various working conditions. Therefore, when selecting a module, these two indicators need to be considered comprehensively to ensure that it can meet the needs of actual applications.
3.High Reliability
In terms of structural design, this component adopts a glass back panel structure, special materials are selected, and the frame is very strong. These designs have effectively improved the mechanical performance of the module, making it more stable and reliable. At the same time, the multi-busbar design of the module also helps reduce the risk of micro-cracks and broken busbars, further improving the stability and reliability of the module. The half-chip structure design can effectively reduce the adaptability of the inverter in harsh environments.
4.Ultra-low LID
Attenuation in the first year: 1%, annual attenuation: 0.55%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.
Product number | 390 | 395 | 400 | 405 | 410 | 415 |
quality assurance | ||||||
product quality assurance | 12 years | |||||
Power Output Guaranteed | Degrades 0.55% per year for 25 years | |||||
Electrical performance parameters (STC) | ||||||
Peak Power (Pmax) | 390 Wp | 395 Wp | 400 Wp | 405 Wp | 410 Wp | 415 Wp |
Peak operating voltage (Vmpp) | 30.27 V | 30.42 V | 30.56 V | 30.74 V | 30.86 V | 31.00 V |
Peak operating current (Impp) | 12.89 A | 12.99 A | 13.09 A | 13.19 A | 13.29 A | 13.39 A |
Open circuit voltage (Voc) | 36.80 V | 36.90 V | 37.00 V | 37.10 V | 37.20 V | 37.30 V |
Short circuit current (Isc) | 13.68 A | 13.77 A | 13.86 A | 13.95 A | 14.04 A | 14.13 A |
Component efficiency | 19.97% | 20.23% | 20.48% | 20.74% | 21.00% | 21.25% |
Power deviation (positive) | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% |
Electrical performance parameters (NOCT) | ||||||
Peak Power (Pmax) | 296.85 Wp | 300.63 Wp | 304.34 Wp | 308.17 Wp | 312.03 Wp | 315.80 Wp |
Peak operating voltage (Vmpp) | 28.87 V | 29.01 V | 29.14 V | 29.29 V | 29.43 V | 29.56 V |
Peak operating current (Impp) | 10.28 A | 10.36 A | 10.44 A | 10.52 A | 10.60 A | 10.68 A |
Open circuit voltage (Voc) | 34.98 V | 35.08 V | 35.17 V | 35.27 V | 35.36 V | 35.46 V |
Short circuit current (Isc) | 11.02 A | 11.09 A | 11.17 A | 11.24 A | 11.31 A | 11.38 A |
maximum durable temperature | 39±2 °C | |||||
temperature characteristics | ||||||
Operating temperature | -40~85 °C | |||||
Temperature coefficient (Pmax) | .-0.35 %/°C | |||||
Temperature Coefficient (Voc) | .-0.28 %/°C | |||||
Temperature Coefficient (Isc) | 0.05 %/°C | |||||
System Integration Parameters | ||||||
system voltage | 1000 VDC / 1500 VDC | |||||
Fuse rated current | 25 A | |||||
physical parameters | ||||||
Component size (height/width/thickness) | 1722x1134x30 mm | |||||
weight | 24.8 kg | |||||
Cell type | Monocrystalline silicon | |||||
Cell specification | 108×108 mm | |||||
Cell Quantity | 108 | |||||
glass type | Tempering | |||||
glass thickness | 3.2 mm | |||||
border type | Anodized aluminum alloy | |||||
Junction box protection class | IP 68 | |||||
connector type | MC4 | |||||
Cable cross section | 4 mm2 | |||||
cable length | 1200 mm |